Study of intermixing in a GaAsÕAlGaAs quantum-well structure using doped spin-on silica layers

The effect of two different dopants, P and Ga, in spin-on glass ~SOG! films on impurity-free vacancy disordering ~IFVD! in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO2 and is ascribed to the low doping concentration of P, indicating that the doping concentration of P in the SiO2 layer is one of the key parameters that may control intermixing. On the other hand, for all the samples encapsulated with Ga-doped SOG layers, significant suppression of the intermixing was observed, making them very promising candidates with which to achieve the selective-area defect engineering that is required for any successful application of IFVD. © 2002 American Institute of Physics. @DOI: 10.1063/1.1449522#